APRO Industrial M.2 PCIe Module (MDP)

Flash Type	3D-NAND	3D-NAND	3D-NAND	3D-NAND	3D-NAND	3D-NAND aSLC Mode	3D-NAND aSLC Mode
Flash Process	Kioxia BiCS5 112L	Kioxia BiCS5 112L	BiCS5 112L	Kioxia BiCS5 112L	Kioxia BiCS5 112L	Kioxia BiCS5 112L	Kioxia BiCS5 112L
Series	HERMES-L(EOL)	HERCULES-PA	PHANES-V	PHANES-X	PHANES-X	PHANES-X	PHANES-X
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Capacity	128GB~2TB	128GB~1TB	480GB~3,840GB	128GB~1TB	128GB~2TB	32GB~256GB	32GB~512GB
Form-Factor	M.2 2280-S2-M	M.2 2242-D2-M M.2 2280-D2-M	M.2 2280-D2-M	M.2 2230-D2-M	M.2 2280-S2-M	M.2 2230-D2-M	M.2 2280-S2-M
Compatibility	NVM ExpressTM 1.3d Standard & PCI Express® Base Specification Rev 3.1	NVM ExpressTM 1.3 Standard & PCI Express® Base Specification Rev 3.0	NVM ExpressTM 1.4 Standard & PCI Express® Base Specification Rev 4.0	NVM ExpressTM 1.3 Standard & PCI Express® Base Specification Rev 3.0	NVM ExpressTM 1.3 Standard & PCI Express® Base Specification Rev 3.0	NVM ExpressTM 1.3 Standard & PCI Express® Base Specification Rev 3.0	NVM ExpressTM 1.3 Standard & PCI Express® Base Specification Rev 3.0
Data transfer rate	PCI Gen3 x 4 NVMe interface	PCI Gen3 x 4 NVMe interface	PCI Gen4 x 4 NVMe interface	PCI Gen3 x 4 NVMe interface	PCI Gen3 x 4 NVMe interface	PCI Gen3 x 4 NVMe interface	PCI Gen3 x 4 NVMe interface
Sequential R/W (Max.)	Read: 2,050 MB/sec Write: 1,950 MB/sec	Read: 2,600 MB/sec Write: 1,750 MB/sec	Read: 7,200 MB/sec Write: 1,200 MB/sec	Read: 2,450 MB/sec Write: 1,750 MB/sec	Read: 2,100 MB/sec Write: 1,800 MB/sec	Read: 2,400 MB/sec Write: 1,750 MB/sec	Read: 2,450 MB/sec Write: 1,900 MB/sec
4K Random R/W IOPS.(Max.)	Read: 373,000 IOPS. Write: 353,000 IOPS.	Read: 231,000 IOPS. Write: 299,000 IOPS.	Read: 580,000 IOPS. Write: 200,000 IOPS.	Read: 200,000 IOPS. Write: 400,000 IOPS.	Read: 270,000 IOPS. Write: 420,000 IOPS.	Read: 220,000 IOPS. Write: 390,000 IOPS.	Read: 250,000 IOPS. Write: 420,000 IOPS.
Operating temp. (STD/IND or WIDE)	S : 0˚C~+70˚C/ W : -40˚C~+85˚C	S : 0˚C~+70˚C/ W : -40˚C~+85˚C	S : 0˚C~+70˚C/ W : -40˚C~+85˚C	S : 0˚C~+70˚C/ W : -40˚C~+85˚C	S : 0˚C~+70˚C/ W : -40˚C~+85˚C	S : 0˚C~+70˚C/ W : -40˚C~+85˚C	S : 0˚C~+70˚C/ W : -40˚C~+85˚C
Power requirement	+3.3 V ± 5%	+3.3 V ± 5%	+3.3 V ± 5%	+3.3 V ± 5%	+3.3 V ± 5%	+3.3 V ± 5%	+3.3 V ± 5%
Wear-leveling	Static and Dynamic	Static and Dynamic	Static and Dynamic	Static and Dynamic	Static and Dynamic	Static and Dynamic	Static and Dynamic
TBW	Up to 2,600 TBW at 2TB JESD 219A Workload	Up to 1,300 TBW at 1TB JESD 219A Workload	Up to 6,800 TBW at 3,840GB JESD 219A Workload	Up to 1,120 TBW at 1TB JESD 219A Workload	Up to 2,400 TBW at 2TB JESD 219A Workload	Up to 10,000 TBW at 256GB JESD 219A Workload	Up to 8,000 TBW at 512GB JESD 219A Workload
Erase counts	3,000	3,000	3,000	3,000	3,000	30,000	30,000
Weight (Max.)	2280: 10g	2242: 4.5g 2280: 10g	2280: 10g	2230: 8g	2280: 10g	2230: 8g	2280: 10g
Dimension (WxLxH,mm)	2280: 22.00 x 80.00	2242: 22.00 x 42.00 2280: 22.00 x 80.00	2280: 22.00 x 80.00	2230: 22.00 x 30.00	2280: 22.00 x 80.00	2230: 22.00 x 30.00	2280: 22.00 x 80.00
Conformal coating	Optional	Optional	Optional	Optional	Optional	Optional	Optional
Warranty (Std./Ind.)	2 years or within 3,000 erasing counts	2 years or within 3,000 erasing counts	2 years or within 3,000 erasing counts	2 years or within 3,000 erasing counts	2 years or within 3,000 erasing counts	2 years or within 30,000 erasing counts	2 years or within 30,000 erasing counts

Flash Type	3D-NAND	3D-NAND	3D-NAND	3D-NAND	3D-NAND
Flash Process	Kioxia BiCS5 112L	Kioxia BiCS5 112L	BiCS5 112L	Kioxia BiCS5 112L	Kioxia BiCS5 112L
Series	HERMES-L(EOL)	HERCULES-PA	PHANES-V	PHANES-X	PHANES-X
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Capacity	128GB~2TB	128GB~1TB	480GB~3,840GB	128GB~1TB	128GB~2TB
Form-Factor	M.2 2280-S2-M	M.2 2242-D2-M M.2 2280-D2-M	M.2 2280-D2-M	M.2 2230-D2-M	M.2 2280-S2-M
Compatibility	NVM ExpressTM 1.3d Standard & PCI Express® Base Specification Rev 3.1	NVM ExpressTM 1.3 Standard & PCI Express® Base Specification Rev 3.0	NVM ExpressTM 1.4 Standard & PCI Express® Base Specification Rev 4.0	NVM ExpressTM 1.3 Standard & PCI Express® Base Specification Rev 3.0	NVM ExpressTM 1.3 Standard & PCI Express® Base Specification Rev 3.0
Data transfer rate	PCI Gen3 x 4 NVMe interface	PCI Gen3 x 4 NVMe interface	PCI Gen4 x 4 NVMe interface	PCI Gen3 x 4 NVMe interface	PCI Gen3 x 4 NVMe interface
Sequential R/W (Max.)	Read: 2,050 MB/sec Write: 1,950 MB/sec	Read: 2,600 MB/sec Write: 1,750 MB/sec	Read: 7,200 MB/sec Write: 1,200 MB/sec	Read: 2,450 MB/sec Write: 1,750 MB/sec	Read: 2,100 MB/sec Write: 1,800 MB/sec
4K Random R/W IOPS.(Max.)	Read: 373,000 IOPS. Write: 353,000 IOPS.	Read: 231,000 IOPS. Write: 299,000 IOPS.	Read: 580,000 IOPS. Write: 200,000 IOPS.	Read: 200,000 IOPS. Write: 400,000 IOPS.	Read: 270,000 IOPS. Write: 420,000 IOPS.
Operating temp. (STD/IND or WIDE)	S : 0˚C~+70˚C/ W : -40˚C~+85˚C	S : 0˚C~+70˚C/ W : -40˚C~+85˚C	S : 0˚C~+70˚C/ W : -40˚C~+85˚C	S : 0˚C~+70˚C/ W : -40˚C~+85˚C	S : 0˚C~+70˚C/ W : -40˚C~+85˚C
Power requirement	+3.3 V ± 5%	+3.3 V ± 5%	+3.3 V ± 5%	+3.3 V ± 5%	+3.3 V ± 5%
Wear-leveling	Static and Dynamic	Static and Dynamic	Static and Dynamic	Static and Dynamic	Static and Dynamic
TBW	Up to 2,600 TBW at 2TB JESD 219A Workload	Up to 1,300 TBW at 1TB JESD 219A Workload	Up to 6,800 TBW at 3,840GB JESD 219A Workload	Up to 1,120 TBW at 1TB JESD 219A Workload	Up to 2,400 TBW at 2TB JESD 219A Workload
Erase counts	3,000	3,000	3,000	3,000	3,000
Weight (Max.)	2280: 10g	2242: 4.5g 2280: 10g	2280: 10g	2230: 8g	2280: 10g
Dimension (WxLxH,mm)	2280: 22.00 x 80.00	2242: 22.00 x 42.00 2280: 22.00 x 80.00	2280: 22.00 x 80.00	2230: 22.00 x 30.00	2280: 22.00 x 80.00
Conformal coating	Optional	Optional	Optional	Optional	Optional
Warranty (Std./Ind.)	2 years or within 3,000 erasing counts	2 years or within 3,000 erasing counts	2 years or within 3,000 erasing counts	2 years or within 3,000 erasing counts	2 years or within 3,000 erasing counts

Flash Type	3D-NAND aSLC Mode	3D-NAND aSLC Mode
Flash Process	Kioxia BiCS5 112L	Kioxia BiCS5 112L
Series	PHANES-X	PHANES-X
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Capacity	32GB~256GB	32GB~512GB
Form-Factor	M.2 2230-D2-M	M.2 2280-S2-M
Compatibility	NVM ExpressTM 1.3 Standard & PCI Express® Base Specification Rev 3.0	NVM ExpressTM 1.3 Standard & PCI Express® Base Specification Rev 3.0
Data transfer rate	PCI Gen3 x 4 NVMe interface
Sequential R/W (Max.)	Read: 2,400 MB/sec Write: 1,750 MB/sec	Read: 2,450 MB/sec Write: 1,900 MB/sec
4K Random R/W IOPS.(Max.)	Read: 220,000 IOPS. Write: 390,000 IOPS.	Read: 250,000 IOPS. Write: 420,000 IOPS.
Operating temp. (STD/IND or WIDE)	S : 0˚C~+70˚C/ W : -40˚C~+85˚C	S : 0˚C~+70˚C/ W : -40˚C~+85˚C
Power requirement	+3.3 V ± 5%	+3.3 V ± 5%
Wear-leveling	Static and Dynamic	Static and Dynamic
TBW	Up to 10,000 TBW at 256GB JESD 219A Workload	Up to 8,000 TBW at 512GB JESD 219A Workload
Erase counts	30,000	30,000
Weight (Max.)	2280: 8g	2280: 10g
Dimension (WxLxH,mm)	2280: 22.00 x 30.00	2280: 22.00 x 80.00
Conformal coating	Optional	Optional
Warranty (Std./Ind.)	2 years or within 30,000 erasing counts	2 years or within 30,000 erasing counts

Flash Type	3D-NAND	3D-NAND	3D-NAND	3D-NAND	3D-NAND	3D-NAND aSLC Mode	3D-NAND aSLC Mode
Series	HERMES-L(EOL)	HERCULES-PA	PHANES-V	PHANES-X	PHANES-X	PHANES-X	PHANES-X
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SpecSheet	To be update	To be update	To be update	To be update	To be update	To be update	To be update
DataSheet	Downloads	Downloads	Downloads	Downloads	Downloads	Downloads	Downloads
Dimension	Downloads	Please refer to the DATASHEET	Downloads	Please refer to the DATASHEET	Downloads	Please refer to the DATASHEET	Downloads