Flash Type | SLC | MLC | aSLC | 3D-NAND | 3D-NAND | 3D-aSLC |
---|---|---|---|---|---|---|
Flash Process | Kioxia 24nm | Samsung 14nm | Samsung 14nm aSLC mode | Kioxia BiCS5 112L | Micron B16 96L | Kioxia BiCS5 aSLC mode |
Series | PHANES-F | PHANES-F | PHANES-F | PHANES-T | PHANES-P | PHANES-T |
Picture | ![]() |
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Capacity | 1GB~4GB | 8GB~32GB | 4GB~16GB | 64GB~512GB | 32GB~128GB | 16GB~128GB |
Form-Factor | Standard microSD | Standard microSD | Standard microSD | Standard microSD | Standard microSD | Standard microSD |
Compatibility | SDA3.0 | SDA3.0 | SDA3.0 | SDA6.1 | SDA6.1 | SDA6.1 |
microSD/microSDHC | 1GB to 2GB: FAT file system | 8GB to 32GB: FAT16 file system | 4GB~16GB: FAT16 file system | N/A | 32GB: FAT16 file system |
16GB, 32GB: FAT16 file system |
microSDHC/microSDXC | 4GB: FAT16 file system | N/A | N/A | 64GB~512GB: exFAT | 64GB~128GB: exFAT | 64GB~128GB: exFAT file system |
Data transfer rate | 1GB,2GB(non-UHS)(Class-6) 4GB(UHS-I)(Class-10) |
Class-10 | Class-10 | A1,V10,Class-10 U1,UHS-1 |
A1,V10,Class-10 U1,UHS-1 |
A1,V10,Class-10 U3,UHS-1 |
Sequential read (Max.) | microSD: 23.4 MB/sec microSDHC: 67.2 MB/sec |
microSDHC: 93.9 MB/sec microSDXC: 94.3 MB/sec |
microSDHC: 95.3 MB/sec | microSDHC: 95.0 MB/sec microSDXC: 95.0 MB/sec |
microSDHC: 95.0 MB/sec microSDXC: 95.0 MB/sec |
microSDHC: 95.0 MB/sec microSDXC: 95.0 MB/sec |
Sequential write (Max.) | microSD: 20.7 MB/sec microSDHC: 48.4 MB/sec |
microSDHC: 61.6 MB/s (Max.) microSDXC: 76.7 MB/s (Max.) |
microSDHC: 83.6 MB/sec | microSDHC: 20.0 MB/sec microSDHC: 30.0 MB/sec |
microSDHC: 15.0 MB/sec microSDHC: 55.0 MB/sec |
microSDHC: 85.0 MB/sec microSDHC: 85.0 MB/sec |
Operating temp. (STD/IND or WIDE) |
I : -40˚C~+85˚C | W : -40˚C~+85˚C | W : -40˚C~+85˚C | S : -25˚C~+85˚C | S : -25˚C~+85˚C | S : -25˚C~+85˚C |
Power requirement | 2.7V to 3.6V | 2.7V to 3.6V | 2.7V to 3.6V | 2.7V to 3.6V | 2.7V to 3.6V | 2.7V to 3.6V |
Wear-leveling | Static & Dynamic | Static & Dynamic | Static & Dynamic | Static & Dynamic | Static & Dynamic | Static & Dynamic |
Erase counts | 60,000 | 3,000 | 20,000 | 3,000 | 3,000 | 30,000 |
Weight (Max.) | 0.3g | 0.3g | 0.3g | 0.3g | 0.3g | 0.3g |
Dimension (WxLxH,mm) | 11.0 x 15. 0 x 1.0 | 11.0 x 15. 0 x 1.0 | 11.0 x 15. 0 x 1.0 | 11.0 x 15. 0 x 1.0 | 11.0 x 15. 0 x 1.0 | 11.0 x 15. 0 x 1.0 |
Warranty (Std./Ind.) | 5 years or within 60,000 erasing counts | 2 years or within 3,000 erasing counts | 2 years or within 20,000 erasing counts | 2 years or within 3,000 erasing counts | 2 years or within 3,000 erasing counts | 2 years or within 30,000 erasing counts |
Flash Type | SLC |
---|---|
Flash Proces | Kioxia 24nm |
Series | PHANES-F |
Picture | ![]() |
Capacity | 1GB~4GB |
Form-Factor | Standard microSD |
Compatibility | SDA3.0 |
microSD/microSDHC | 1GB to 2GB: FAT file system |
microSDHC/microSDXC | 4GB: FAT16 file system |
Data transfer rate | 1GB,2GB(non-UHS)(Class-6) 4GB(UHS-I)(Class-10) |
Sequential read (Max.) | microSD: 23.4 MB/sec microSDHC: 67.2 MB/sec |
Sequential write (Max.) | microSD: 20.7 MB/sec microSDHC: 48.4 MB/sec |
Operating temp. (STD/IND or WIDE) |
I : -40˚C~+85˚C |
Power requirement | 2.7V to 3.6V |
Wear-leveling | Static & Dynamic |
Erase counts | 60,000 |
Weight (Max.) | 0.3g |
Dimension (WxLxH,mm) | 11.0 x 15. 0 x 1.0 |
Warranty (Std./Ind.) | 5 years or within 60,000 erasing counts |
Flash Type | MLC |
---|---|
Flash Proces | Samsung 14nm |
Series | PHANES-F |
Picture | ![]() |
Capacity | 8GB~32GB |
Form-Factor | Standard microSD |
Compatibility | SDA3.0 |
microSD/microSDHC | 8GB to 32GB: FAT16 file system |
microSDHC/microSDXC | N/A |
Data transfer rate | Class-10 |
Sequential read (Max.) | microSDHC: 95.0 MB/sec |
Sequential write (Max.) | microSDHC: 62.0 MB/s (Max.) |
Operating temp. (STD/IND or WIDE) |
W : -40˚C~+85˚C |
Power requirement | 2.7V to 3.6V |
Wear-leveling | Static & Dynamic |
Erase counts | 3,000 |
Weight (Max.) | 0.3g |
Dimension (WxLxH,mm) | 11.0 x 15. 0 x 1.0 |
Warranty (Std./Ind.) | 2 years or within 3,000 erasing counts |
Flash Type | aSLC |
---|---|
Flash Proces | Samsung 14nm aSLC Mode |
Series | PHANES-F |
Picture | ![]() |
Capacity | 4GB~16GB |
Form-Factor | Standard microSD |
Compatibility | SDA3.0 |
microSD/microSDHC | 4GB~16GB: FAT16 file system |
microSDHC/microSDXC | N/A |
Data transfer rate | Class-10 |
Sequential read (Max.) | microSDHC: 95.0 MB/sec |
Sequential write (Max.) | microSDHC: 85.0 MB/sec |
Operating temp. (STD/IND or WIDE) |
W : -40˚C~+85˚C |
Power requirement | 2.7V to 3.6V |
Wear-leveling | Static & Dynamic |
Erase counts | 20,000 |
Weight (Max.) | 0.3g |
Dimension (WxLxH,mm) | 11.0 x 15. 0 x 1.0 |
Warranty (Std./Ind.) | 2 years or within 20,000 erasing counts |
Flash Type | 3D-NAND | 3D-NAND |
---|---|---|
Flash Process | Kioxia BiCS5 112L | Micron B16 96L |
Series | PHANES-T | PHANES-P |
Picture | ![]() |
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Capacity | 64GB~512GB | 32GB~128GB |
Form-Factor | Standard microSD | Standard microSD |
Compatibility | SDA6.1 | SDA6.1 |
microSD/microSDHC | 16GB / 32GB: FAT16 file system |
16GB: FAT16 file system |
microSDXC | 64GB~512GB: exFAT file system |
128GB~256GB: exFAT file system |
Data transfer rate | A2,V30,Class-10, U3,UHS-1 |
A1,V10,Class-10, U1,UHS-1 |
Sequential read (Max.) | microSDHC: 95.0 MB/sec microSDXC: 101.0 MB/sec |
microSDHC: 95.0 MB/sec microSDXC: 95.0 MB/sec |
Sequential write (Max.) | >microSDHC: 20.0 MB/sec microSDXC: 93.0 MB/sec |
>microSDHC: 15.0 MB/sec microSDXC: 50.0 MB/sec |
Operating temp. (STD/IND or WIDE) |
S : -25˚C~+85˚C | S : -25˚C~+85˚C |
Power requirement | 2.7V to 3.6V | 2.7V to 3.6V |
Wear-leveling | Static & Dynamic | Static & Dynamic |
Erase counts | 3,000 | 3,000 |
Weight (Max.) | 0.3g | 0.3g |
Dimension (WxLxH,mm) | 11.0 x 15. 0 x 1.0 | 11.0 x 15. 0 x 1.0 |
Warranty (Std./Ind.) | 2 years or within 3,000 erasing counts | 2 years or within 3,000 erasing counts |
Flash Type | 3D-aSLC |
---|---|
Flash Process | Kioxia BiCS5 aSLC Mode |
Series | PHANES-T |
Picture | ![]() |
Capacity | 16GB~128GB |
Form-Factor | Standard microSD |
Compatibility | SDA6.1 |
microSD/microSDHC | 16GB, 32GB: FAT16 file system |
microSDXC | 64GB, 128GB: exFAT file system |
Data transfer rate | A2,V30,Class-10, U3,UHS-1 |
Sequential read (Max.) | microSDHC: 95.0 MB/sec microSDXC: 95.0 MB/sec |
Sequential write (Max.) | >microSDHC: 85.0 MB/sec microSDXC: 85.0 MB/sec |
Operating temp. (STD/IND or WIDE) |
S : -25˚C~+85˚C |
Power requirement | 2.7V to 3.6V |
Wear-leveling | Static & Dynamic |
Erase counts | 30,000 |
Weight (Max.) | 0.3g |
Dimension (WxLxH,mm) | 11.0 x 15. 0 x 1.0 |
Warranty (Std./Ind.) | 2 years or within 30,000 erasing counts |
Flash Type | SLC | MLC | aSLC | 3D-NAND | 3D-NAND | 3D-aSLC |
---|---|---|---|---|---|---|
Flash Process | Kioxia 24nm | Samsung 14nm | Samsung 14nm aSLC Mode | Kioxia BiCS5 112L | Micron B16 96L | Kioxia BiCS5 aSLC Mode |
Series | PHANES-F | PHANES-F | PHANES-F | PHANES-T | PHANES-P | PHANES-T |
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